Herbert Mataré，Herbert Franz Mataré (born September 22, 1912) ，德国物理学家。
晶体管发明编辑本段回目录
Herbert Mataré（1990）1947：点接触晶体管的发明。John Bardeen& Walter Brattain于1947年12月在锗点接触器件中获得晶体管效应。
1948：结型晶体管的概念。William Shockley设想出了一种基于对p-n结效应理论理解的改进型晶体管结构。
1948：欧洲晶体管的发明。Herbert Mataré和 Heinrich Welker在法国独立创造了锗点接触晶体管。
1948年7月1日的《纽约时报》刊登了一条简短的消息：贝尔实验室发明了一种叫做晶体管的元件，这种元件将可能替代电子管在电子设备如收音机等中的应用。1956年，贝尔实验室的William Shockley, John Bardeen和Walter Brattain因此获得了诺贝尔物理学奖。而不为大家所知的另一个事实是：同一年在法国巴黎另有一个德国研究小组也独立做出了晶体管的原型，但由于种种原因并未发布。今天，晶体管依旧是各种电子设备组成中独一无二的基石，并且至少在几十年内没有实质的对手。仿佛老子《道德经》所说的：“道生一，一生二，二生三，三生万物”，小小的晶体管激发了人类无穷的想象力和创造力。让我们也记住这个德国小组成员的名字吧：Heinrich Welker和Herbert Mataré。
千百年后，我们这个时代可能和铜器时代，铁器时代一同出现在历史教科书的同一页，并且被冠之以：晶体管时代。
个人简介编辑本段回目录
Herbert Franz Mataré (born September 22, 1912) is a German physicist. The focus of his research is the field of semiconductor research. His best-known work is the first functional "European" transistor, which he developed and patented together with Heinrich Welker in the vicinity of Paris in 1948, at the same time and independently from the Bell Labs engineers. Mataré lives in California. Born in Aachen, he is the nephew of the sculptor Ewald Mataré (1887-1965).
Herbert MataréMataré completed his studies in mathematics, chemistry, electrochemistry, nuclear physics and solid-state physics at the Technical University of Aachen with degree "Diplom-Ingenieur" in Applied Physics. In addition, he studied mathematics, physics and chemistry at the University of Geneva.
当年的发明In 1939 he joined the Telefunken research laboratory in Berlin. At that time it became obvious that the miniaturization of vacuum tubes had met a technical limit and that alternative solutions had to be sought using solid state circuits and principles of the previous transistor inventions of Julius Edgar Lilienfeld, Oskar Heil, Walter Schottky and Robert Wichard Pohl.
Because of the massive air raids on Berlin in 1943, the Telefunken laboratory were moved to the Cisterian abbey in Lubiąż (Leubus) Silesia, where Mataré focused on the improvement of the cm-wave (SHF) receiver sensitivity.
In 1944, as the Russian army closed in, the site and most of its equipment were abandoned and the operation was transferred to Thuringia. Later Mataré taught physics and mathematics in Wabern near Kassel and gave lectures at the Aachen university, and he was invited to build a semiconductor diode plant for Compagnie des Freins & Signaux Westinghouse in Aulnay-sous-Bois near Paris.
At the same time as the American researchers and independently, the German researchers Mataré and Heinrich Welker developed the first operational "French transistor" at Compagnie des Freins & Signaux Westinghouse in Aulnay-sous-Bois near Paris during the years 1945 to 1948. They filed their first transistor patent application on August 13, 1948.[2][3]On 18 May 1949, this European invention coined as the "Le Transistron" was presented to the public.
In 1951/1952, Mataré founded Intermetall in Düsseldorf, the world's first company, which offered diodes and transistors.
教育背景编辑本段回目录
1933 BS Physics, Mathematics, and Chemistry Aachen; University of Geneva
1939 MS (Dipl.-Ing.) Physics Technische Hochschule Aachen
1942 PhD (Dr.-Ing.) Electronics Technische Hochschule Berlin
1950 PhD (Dr. sc. phys) Solid State Physics École Normale Supérieure (ENS) Paris
获得荣誉编辑本段回目录
Life Fellow IEEE“
Member emeritus“ New York Academy of Sciences
The Eduard Rhein Ring of Honor 2008 Eduard-Rhein-Foundation
书籍编辑本段回目录
H. F. Mataré (April 2001). "Erlebnisse eines deutschen Physikers und Ingenieurs von 1912 bis Ende des Jahrhunderts". Der Fernmelde-Ingenieur 4/01, 5/01 (in one volume): 1–109. ISSN 0015-010X.
H. F. Mataré (September 2002). "Von der Radartechnik zur modernen Kommunikationstechnik". Tele-Kommunikation aktuell: TKA 9/02, 10/02 (in one volume): 1–59. ISSN 1619-2036.
Kai Handel (1999-06-29). "Anfänge der Halbleiterforschung und -entwicklung. Dargestellt an den Biographien von vier deutschen Halbleiterpionieren.". PhD thesis RWTH Aachen. http://darwin.bth.rwth-aachen.de/opus3/volltexte/2008/2517/pdf/Handel_Kai.pdf.
专利Patents编辑本段回目录
The following list can only present a part of the more than 80 patents which Mataré has filed.
US patent 2552052 H. F. Mataré: „Push-pull converter of the crystal type for ultra-short waves“ filed in France on May 23, 1947
FR patent 1010427 H. F. Mataré/H. Welker/Westinghouse: „Nouveau système cristallin à plusieurs électrodes réalisant des effects de relais électroniques“ filed on August 13, 1948
US patent 2673948 H. F. Mataré/H. Welker/Westinghouse: „Crystal device for controlling electric currents by means of a solid semiconductor“ french priority date August 13, 1948
晶体管电子学的发展里程碑编辑本段回目录
（摘自《贝尔实验室》杂志，1975年1月，P74）
1948 - 点接触式晶体管
1950 - 单晶锗
1951 - 生长结晶体管
1952 - 合金结晶体管
1952 - 区域熔化和提炼
1952 - 单晶硅片
1955 - 扩散底层晶体管
1957 - 氧化物掩蔽
1960 - 平面型晶体管
1960 - 金属氧化物半导体晶体管
1960 - 外延型晶体管
1961 - 集成电路
